The SJT Micropower Solution - High Voltage on Low Voltage CMOS
SJT Micropower designs highly efficient, low footprint, power management circuits that can be readily integrated into standard SOI CMOS using our patented Si-MESFETTM technology.
There are many opportunities including efficient power regulation modules, RF power amplifiers and radiation hardened electronics that can take advantage of our technology.
There are many opportunities including efficient power regulation modules, RF power amplifiers and radiation hardened electronics that can take advantage of our technology.
Key Technology Enablers
SJT Micropower has developed and characterized a high voltage (>20V) transistor that can operate at several Watts of power, has high cutoff frequency and is radiation tolerant for cutting edge linear power regulation and RF wireless technologies on highly scaled SOI CMOS processes. We have demonstrated it down to 45nm with no changes to the process flow (no additional cost at the foundry) and are currently scaling it towards smaller technology nodes. SJT has been funded through multiple Phase 2 SBIR/STTR contracts and are currently running statistical variation analysis over multiple successful foundry runs at different foundries. We are seeking commercialization partners.Extremely Low Power MedRadio Transceiver
In addition, we are developing an extremely low power CMOS wireless transceiver for the medical implant communications service (MedRadio). The transceiver has been developed as part of a NIH Phase 2 SBIR.
NEWS:
02-14-2013GOMAC 2013 - March 11-14
SJT will present our rad-hard 45nm High Voltage MESFET technology. Please contact us if you are interested in meeting at the conference.
02-01-2013
NASA Phase 2E
SJT has been awarded Phase 2E commercialization funding by NASA.
1-27-2013
IEEE Microwave Theory and Wireless Component Letters We recently had our 32dBm power amplifier research accepted for publication by the MTT society.
>$3M To Date Raised for Product Development